CEF02N6A DATASHEET PDF

V DSS. R DS ON. High power and current handing capability. Lead free product is acquired. Drain-Source Voltage. Gate-Source Voltage.

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V DSS. R DS ON. High power and current handing capability. Lead free product is acquired. Drain-Source Voltage. Gate-Source Voltage. Drain Current-Continuous. Drain Current-Pulsed a. V DS Single Pulsed Avalanche Energy d. Single Pulsed Avalanche Current d. E AS 90 Operating and Store Temperature Range.

T J ,T stg. Thermal Characteristics. Thermal Resistance, Junction-to-Case. Thermal Resistance, Junction-to-Ambient.

No Preview Available! Test Condition. Min Typ Max Units. Off Characteristics. Drain-Source Breakdown Voltage. Zero Gate Voltage Drain Current. Gate Body Leakage Current, Forward. Gate Body Leakage Current, Reverse. On Characteristics b. BV DSS. I DSS. I GSSF. I GSSR. Gate Threshold Voltage. Static Drain-Source. V GS th. R DS on. Forward Transconductance.

Dynamic Characteristics c. Input Capacitance. Output Capacitance. Reverse Transfer Capacitance. Switching Characteristics c. C iss. C oss. C rss 21 pF. Turn-On Delay Time. Turn-On Rise Time. Turn-Off Delay Time. Turn-Off Fall Time. Total Gate Charge. Gate-Source Charge. Gate-Drain Charge. Drain-Source Diode Forward Current. Drain-Source Diode Forward Voltage b. Notes :. Repetitive Rating : Pulse width limited by maximum junction temperature. Guaranteed by design, not subject to production testing.

Limited only by maximum temperature allowed. Pulse width limited by safe operating area. Part Number. View PDF for Mobile. Site map. Contact us. Buy Components. Privacy Policy.

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