V DSS. R DS ON. High power and current handing capability. Lead free product is acquired. Drain-Source Voltage. Gate-Source Voltage.
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V DSS. R DS ON. High power and current handing capability. Lead free product is acquired. Drain-Source Voltage. Gate-Source Voltage. Drain Current-Continuous. Drain Current-Pulsed a. V DS Single Pulsed Avalanche Energy d. Single Pulsed Avalanche Current d. E AS 90 Operating and Store Temperature Range.
T J ,T stg. Thermal Characteristics. Thermal Resistance, Junction-to-Case. Thermal Resistance, Junction-to-Ambient.
No Preview Available! Test Condition. Min Typ Max Units. Off Characteristics. Drain-Source Breakdown Voltage. Zero Gate Voltage Drain Current. Gate Body Leakage Current, Forward. Gate Body Leakage Current, Reverse. On Characteristics b. BV DSS. I DSS. I GSSF. I GSSR. Gate Threshold Voltage. Static Drain-Source. V GS th. R DS on. Forward Transconductance.
Dynamic Characteristics c. Input Capacitance. Output Capacitance. Reverse Transfer Capacitance. Switching Characteristics c. C iss. C oss. C rss 21 pF. Turn-On Delay Time. Turn-On Rise Time. Turn-Off Delay Time. Turn-Off Fall Time. Total Gate Charge. Gate-Source Charge. Gate-Drain Charge. Drain-Source Diode Forward Current. Drain-Source Diode Forward Voltage b. Notes :. Repetitive Rating : Pulse width limited by maximum junction temperature. Guaranteed by design, not subject to production testing.
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